Effects of substrate temperatures on the crystallizations and microstructures of electron beam evaporation YSZ thin films

Yttria-stabilized zirconia (YSZ) thin films were grown on Si(1 0 0) substrate using electron beam (E-beam) evaporation by changing the substrate temperature from room temperature (RT) to 250 °C. Effects of different substrate temperatures on the crystalline structure, the lattice constant, the grain growth, and the strain of YSZ thin films and the thickness of interfacial SiOx layer between Si wafer and YSZ thin films were developed. Even depositing at room temperature, X-ray diffraction (XRD) analyses showed that the reflection peaks of (1 1 1), (2 0 0), (2 2 0), and (3 1 1) planes were formed. The relative reflection intensities of (1 1 1), (2 0 0), (2 2 0), and (3 1 1) planes were changed as the different substrate temperatures were used. The strains of YSZ thin films increased with increasing substrate temperature and reached a minimum value at 200 °C. The amorphous interlayer formed between Si wafer and YSZ thin films and the images of lattice mismatch were also analyzed by using high resolution transmission electron microscopy (HRTEM).