Crystal structure of the phases Hg5CIII2X8 (CIII = Ga, In; X = Se, Te)

Crystal structure of the chalcogenide compounds Hg5Ga2Se8, Hg5In2Se8, Hg5Ga2Te8 and Hg5In2Te8 was investigated by X-ray structural analysis (powder method) of alloys annealed at 500 K. These phases crystallize in space group F4¯3m with unit cell parameters a ≈ 2a (HgIIX) − 11.6876(2) Å (Hg5Ga2Se8), 11.8876(2) Å (Hg5In2Se8), 12.4738(2) Å (Hg5Ga2Te8) and 12.6723(2) Å (Hg5In2Te8).