Properties of CdS films deposited by the electron beam evaporation technique

Thin CdS films were electron beam evaporated. The CdS powder synthesized in the laboratory by a chemical method was used as source for the deposition of films. Clean glass substrates were used. The substrate temperature was varied in the range of 30–250 °C. X-ray diffraction studies indicated polycrystalline hexagonal structure. The band gap was 2.39 eV. The grain size was 25–35 nm and the surface roughness was 0.3–1.5 nm with increase of substrate temperature. Photoconductive cells fabricated with the doped and undoped films have exhibited high photosensitivity and high signal to noise ratio. The current voltage characteristics were linear.