کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1620630 | 1516391 | 2009 | 8 صفحه PDF | دانلود رایگان |

We investigated the effects of both bias voltage and annealing on the structure and mechanical properties of WC0.75N0.25 thin films, deposited on Si (1 0 0) substrates by a direct current reactive magnetron sputtering system, in which the negative substrate bias voltage (Vb) was varied from floating (−1.6 V) to −200 V, and the deposited films were annealed at 800 °C for 2 h. The X-ray photoelectron spectroscopy and selected area electron diffraction analyses, along with the density-functional theory (DFT) calculations on the electronic structure, showed that WC0.75N0.25 films were a single-phase of carbonitrides. After annealing, a significant decrease in hardness for the films was observed, being a result of point-defect annihilation as Vb was in the range of floating to −120 V. However, when Vb was in the range of −160 to −200 V, the hardness increased from ∼37 GPa for the as-deposited film to a maximum of ∼43 GPa for the annealed one. This increase in hardness after annealing might be attributed to age-hardening.
Journal: Journal of Alloys and Compounds - Volume 486, Issues 1–2, 3 November 2009, Pages 357–364