Structural characteristics and resistive switching properties of thermally prepared TiO2 thin films

Polycrystalline TiO2 thin films were formed on Pt(1 1 1)/Ti/SiO2/Si by thermal oxidation of Ti films with temperatures ranging from 600 °C to 800 °C. Results of Raman spectra testing indicate that the structure of the oxidized TiO2 films is rutile phase. The resistance switching behaviors (RSB) have been confirmed in Pt/TiO2/Pt structures. A stable RSB with a narrow dispersion of the resistance states and switching voltages was observed in the sample fabricated with the oxidation temperature of 600 °C. The resistance ratios of high resistance states to low resistance states are larger than 103 with the set and reset voltage as low as 2.5 V and 0.6 V, respectively.