Preparation of Fe-doped semiconductor NiZrSn

Fe-doped NiZrSn polycrystalline ingots were prepared using arc melting method. Microstructure and electrical properties of the ingots were investigated. According to the EDX results, the solubility of Fe in the C1b phase of the NiZrSn is about 2% by arc melting method. The electrical resistivity of low Fe-doped NiZrSn shows semiconducting temperature dependence and the transport gap estimated from activation plot is about 80 meV.