کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1621122 | 1516382 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis and thermoelectric properties of Zn4Sb3/Bi0.5Sb1.5Te3 bulk nanocomposites
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The bulk nanocomposites f(Zn4Sb3)/Bi0.5Sb1.5Te3 (f = 0, 5, 10 and 15 vol.%) were prepared, and their thermoelectric properties were investigated at temperatures from 300 to 650 K. The results of X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) showed that the nanometer-sized Zn4Sb3 particles were dispersed homogeneously in Bi0.5Sb1.5Te3 matrix. Transport property measurements indicated that the resistivity and Seebeck coefficient of the composite samples f(Zn4Sb3)/Bi0.5Sb1.5Te3 (f = 0, 5, 10 and 15 vol.%) decreased with increasing Zn4Sb3 content due to the increase in carrier concentration. Experiments also showed that thermal conductivity of f(Zn4Sb3)/Bi0.5Sb1.5Te3 decreased monotonically with increasing f owing to enhanced phonon scattering by the dispersed Zn4Sb3 nanoparticles and the phase boundaries in the matrix. Among the samples studied, 15 vol.% (Zn4Sb3)/Bi0.5Sb1.5Te3 exhibited the largest power factor (25 μW/cm K2 at â¼300 K) that was 2.5 times larger than that of Bi0.5Sb1.5Te3; correspondingly, its figure of merit (ZT = 0.6 at â¼300 K) was about three times larger than that of Bi0.5Sb1.5Te3, indicating that the thermoelectric properties of Bi0.5Sb1.5Te3 can be enhanced effectively by the dispersion of nanometer-sized Zn4Sb3.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 500, Issue 2, 25 June 2010, Pages 215-219
Journal: Journal of Alloys and Compounds - Volume 500, Issue 2, 25 June 2010, Pages 215-219
نویسندگان
J.H. Sun, X.Y. Qin, H.X. Xin, D. Li, L. Pan, C.J. Song, J. Zhang, R.R. Sun, Q.Q. Wang, Y.F. Liu,