کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1621239 | 1005745 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Lattice, magnetic and electronic transport behaviors of Ge-doped Mn3XC (X = Al, Zn, Ga)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Lattice, magnetic and electronic transport behaviors of Ge-doped Mn3XC (X = Al, Zn, Ga) Lattice, magnetic and electronic transport behaviors of Ge-doped Mn3XC (X = Al, Zn, Ga)](/preview/png/1621239.png)
چکیده انگلیسی
The lattice, magnetic, and electronic transport properties of Mn3X1−yGeyC (X = Al, Zn, and Ga; y = 0, 0.5) were investigated. Ge-doping does not change the antiperovskite structure, and only decreases the lattice constant in different degree. For all Mn3X1−yGeyC, Ge-doping makes the magnetic transition temperature decrease. The total behavior of Mn3AlxGe1−xC in temperature dependence of resistivity is metallic. For Mn3GaxGe1−xC, since the carrier densities in the ferromagnetic phase and antiferromagnetic one are different, with decreasing the temperature, the resistivity appears an abrupt increase.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 489, Issue 1, 7 January 2010, Pages 289–292
Journal: Journal of Alloys and Compounds - Volume 489, Issue 1, 7 January 2010, Pages 289–292
نویسندگان
Yongchun Wen, Cong Wang, Ying Sun, Guanxin Liu, Man Nie, Lihua Chu,