Study of Gaussian distribution of inhomogeneous barrier height for n-InSb/p-GaAs heterojunction prepared by flash evaporation

n-Type indium antimonide (n-InSb) films were successfully fabricated on p-GaAs monocrystalline substrates by flash evaporation technique. The elemental composition of the prepared films was confirmed by energy dispersive X-ray (EDX) spectroscopy. The morphology and crystal structure of the film were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. The Gaussian distribution model was used to analyze the anomalies observed in current-voltage characteristics of n-InSb/p-GaAs heterojunctions. The barrier height obtained from C-V measurement is higher than obtained from I-V measurement and this discrepancy can be explained by introducing a spatial distribution of barrier heights due to barrier height inhomogeneities.