کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1621694 1005750 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Raman spectroscopy of chalcogenide thin films prepared by PLD
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Raman spectroscopy of chalcogenide thin films prepared by PLD
چکیده انگلیسی
Before Ag doping, binary films exhibited Ge-Se corner-sharing tetrahedra modes at 190 cm−1, low scattering from edge-sharing tetrahedra at 210 cm−1, and Se chains at 260 cm−1 (stretching mode). However, after the diffusion process was complete, we observed an intensity reduction of bands centered at 210 cm−1 and 260 cm−1. The spectra of the photo-diffused films were similar to those of films deposited using a ternary target. Relaxation effects in binary glasses were also analyzed. Results were compared with those of other authors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 495, Issue 2, 16 April 2010, Pages 642-645
نویسندگان
, , , , , ,