کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1622103 | 1516392 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrochemical deposition of thermoelectric SbxTey thin films and nanowires
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
SbxTey thin films and nanowires were electrochemically deposited on a Pt/Si substrate and a Au seed layer, respectively, from aqueous nitric acid solutions at room temperature. As the applied potential increased, the Te content in the films and nanowires decreased. Stoichiometric Sb2Te3 thin films and nanowires were grown at an applied voltage of â140 mV. The grain size and morphology of the Sb2Te3 films strongly depended on applied voltage and film thickness. The as-prepared SbxTey films were amorphous, whereas the as-annealed films were crystallized in the rhombohedral R3¯m structure. We fabricated reproducibly continuous and dense Sb2Te3 nanowires at â140 mV, allowing potential materials for high-performance thermoelectric nanodevices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 485, Issues 1â2, 19 October 2009, Pages 362-366
Journal: Journal of Alloys and Compounds - Volume 485, Issues 1â2, 19 October 2009, Pages 362-366
نویسندگان
K. Park, F. Xiao, B.Y. Yoo, Y. Rheem, N.V. Myung,