کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1622858 | 1516403 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced photoluminescence of Tb3+ in SnO2 film by phosphorus diffusion process
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
SnO2:Tb films on silicon wafers were prepared by DC reactive magnetron sputtering and ion-implantation. It was found that pure rutile polycrystalline SnO2 film with optical band gap of 4.0 eV was formed after high temperature annealing. Furthermore, defect-related light emission at 590 nm from the SnO2 substrate and the intra-4f transition from Tb3+ ions coexisted when the SnO2:Tb film was annealed at 1000 °C for 1 h after Tb3+ ion-implantation. The PL intensity of the D45→Fk7 (k = 6–3) transition of Tb3+ ion was greatly enhanced by the phosphorus diffusion treatment. It is proposed that the Tb3+ ions change from substitution sites to the enlarged interstitial sites in SnO2 host.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 474, Issues 1–2, 17 April 2009, Pages 246–249
Journal: Journal of Alloys and Compounds - Volume 474, Issues 1–2, 17 April 2009, Pages 246–249
نویسندگان
Zhizhong Yuan, Dongsheng Li, Zhihong Liu, Xiaoqiang Li, Minghua Wang, Peihong Cheng, Peiliang Chen, Deren Yang,