Photoelectrochemical studies of CdSe thin films deposited by dip method

Cadmium selenide photoelectrodes have been synthesized by chemical bath method onto stainless steel plate. The configuration of fabricated cell is n-CdSe|NaOH (1 M) + S (1 M) + Na2S (1 M)|C(graphite). The photoelectrochemical cell characterization of the photoelectrodes is carried out by studying current–voltage characteristics in dark, capacitance–voltage in dark, barrier-height measurements, power output, photoresponse and spectral response. The junction ideality factor was found to be 3.23. The flat band potential was found to be 0.7 V. The barrier-height value was found to be 0.186 eV. The study of power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency was found to be 260 mV, 169 μA, 36.91% and 0.55%, respectively. Photoresponse shows lighted ideality factor is 4.06. Spectral response shows the maximum current observed at 730 nm.