کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1623204 1516412 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Improvement of stoichiometry in (ZnO)1−x(GaN)x thin films grown by laser ablation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Improvement of stoichiometry in (ZnO)1−x(GaN)x thin films grown by laser ablation
چکیده انگلیسی
The fabrication of pure and GaN (1 mol%) doped ZnO thin films by KrF excimer laser have been addressed. The fabricated films on Si(1 1 1) substrates have been investigated by X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) in order to investigate the structural, optical and morphological properties, respectively. The XRD analysis shows that the full width at half maximum (FWHM) of ZnO film is found to be decreased as doped with GaN due to the improvement of the stoichiometery between Zn and O. The PL spectra reveal that the deep level emissions due to native donor defects in pure ZnO are suppressed upon doping with GaN. The images of AFM show that the RMS surface roughness of pure ZnO, 27 nm is reduced to18 nm while doped with 1 mol% GaN. The incorporation of nitrogen in the film is confirmed by glow discharge mass spectroscopy (GDMS). The improved structural, optical and morphological properties of ZnO by GaN dopant due to enhancement of stoichiometry have been discussed in detail.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 465, Issues 1–2, 6 October 2008, Pages 502-505
نویسندگان
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