کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1623204 | 1516412 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improvement of stoichiometry in (ZnO)1âx(GaN)x thin films grown by laser ablation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The fabrication of pure and GaN (1Â mol%) doped ZnO thin films by KrF excimer laser have been addressed. The fabricated films on Si(1Â 1Â 1) substrates have been investigated by X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) in order to investigate the structural, optical and morphological properties, respectively. The XRD analysis shows that the full width at half maximum (FWHM) of ZnO film is found to be decreased as doped with GaN due to the improvement of the stoichiometery between Zn and O. The PL spectra reveal that the deep level emissions due to native donor defects in pure ZnO are suppressed upon doping with GaN. The images of AFM show that the RMS surface roughness of pure ZnO, 27Â nm is reduced to18Â nm while doped with 1Â mol% GaN. The incorporation of nitrogen in the film is confirmed by glow discharge mass spectroscopy (GDMS). The improved structural, optical and morphological properties of ZnO by GaN dopant due to enhancement of stoichiometry have been discussed in detail.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 465, Issues 1â2, 6 October 2008, Pages 502-505
Journal: Journal of Alloys and Compounds - Volume 465, Issues 1â2, 6 October 2008, Pages 502-505
نویسندگان
N. Gopalakrishnan, B.C. Shin, K.P. Bhuvana, J. Elanchezhiyan, T. Balasubramanian,