Preparation of copper selenide thin films by simple chemical route at low temperature and their characterization

Copper selenide thin films have been deposited using a precursor solution containing copper sulphate (0.25 M) ammonia 25% and sodium selenosulphate (0.25 M) in aqueous alkaline medium at 5 °C. The as-grown films were found to be well adherent to glass substrates and dark red in color. The films were characterized by X-ray diffraction, scanning electron microscopy, optical absorption, electrical conductivity, and thermo-electric techniques. The analysis of optical absorption data shows energy band gap energy (Eg) to be 2.15 eV. The electrical conductivity of copper selenide thin film was found to be of the order of 10−3 (Ωcm)−1. Thermo-electric power measurement shows p-type conduction mechanism.