کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1623994 | 1516414 | 2008 | 6 صفحه PDF | دانلود رایگان |

We report a study of the growth of iron nitride on gallium nitride using molecular beam epitaxy with Fe e-beam evaporation and rf N-plasma growth. Thin iron nitride layers of thickness about 16 nm were grown and monitored in situ using reflection high energy electron diffraction. The samples following growth were analyzed ex situ using a variety of techniques including X-ray diffraction, Rutherford Backscattering, and atomic force microscopy. By monitoring the structure, morphology, and lattice constant evolution of the iron nitride film, the crystal phase and orientation with respect to the GaN substrate are deduced; and from RBS data, the stoichiometry is obtained. The growth is discussed in terms of a 2-D to 3-D growth mode transition, and a critical thickness is estimated.
Journal: Journal of Alloys and Compounds - Volume 463, Issues 1–2, 8 September 2008, Pages 257–262