کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1624070 | 1516410 | 2009 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Electrical properties of nanocrystalline GaN film prepared by magnetron sputtering Electrical properties of nanocrystalline GaN film prepared by magnetron sputtering](/preview/png/1624070.png)
Nanocrystalline GaN film was prepared by direct current magnetron sputtering. X-ray diffraction and transmission electron microscopy confirmed the presence of hexagonal phase GaN crystallites with particle size of 5 nm. The I–V characteristic of the Al/nc-GaN contacts can be understood in terms of the current transport mechanism of space-charge-limited current. Analysis of the I–V data indicates an equilibrium electron concentration of 8.1 × 1014 cm−3 and the thermal equilibrium Fermi level located 0.27 eV below the conduction band edge. Only one deep level located at 0.364 eV below the conduction band with capture cross-section of 1.74 × 10−18 cm2 was found in the film by Q-DLTS. A simple analysis has been used to identify this deep level.
Journal: Journal of Alloys and Compounds - Volume 467, Issues 1–2, 7 January 2009, Pages 61–64