کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1624305 1516421 2008 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
In situ growth of SiC nanowires by carbothermal reduction using a mixture of low-purity SiO2 and carbon
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
In situ growth of SiC nanowires by carbothermal reduction using a mixture of low-purity SiO2 and carbon
چکیده انگلیسی

Carbothermal process parameters such as powder mixing ratio, temperature, holding time and gas flow rate, which affect on the reasonable growth rate of SiC nanowires were investigated using a mixture of low-purity SiO2 containing iron component and carbon in this study. SiC nanowires are being grown at 1400 °C for 2 h in an argon flow rate of 2 L/min by a vapor–liquid–solid (VLS) process, which produces a very high-purity product with about 60 nm and several hundreds of micrometers in diameter and length, respectively. This is attributed to the migration of the iron out of the low-purity SiO2 material as finely divided iron-rich droplets acting in the role of catalyst for the architecture of a SiC one-dimensional structure. The growth rate of SiC nanowires increased with increasing holding time and flow gas rate, inducing the supersaturation degree to become lower.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 456, Issues 1–2, 29 May 2008, Pages 257–263
نویسندگان
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