کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1624715 | 1005780 | 2008 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: PTCR behaviour of Ba2LaBiO6-doped BaTiO3 ceramics PTCR behaviour of Ba2LaBiO6-doped BaTiO3 ceramics](/preview/png/1624715.png)
The influences of Ba2LaBiO6 content on the electrical property and the microstructure of BaTiO3-based materials have been studied. At a low dopant concentration the grain size is influenced significantly by the donor concentration. With an increase in Ba2LaBiO6 content the grain size decreases rapidly. All the prepared Ba2LaBiO6 doping BaTiO3-based thermistors show typical PTC effect. As the amount of Ba2LaBiO6 added in BaTiO3-based ceramics increases, the room temperature resistivity appears to exhibit a minimum value. At high Ba2LaBiO6 content (≥0.15), the room temperature resistivity increased again with increasing Ba2LaBiO6 content. At a given content of Ba2LaBiO6, the influence of sintering temperature on the electrical properties of samples has been investigated. A maximum of ρmax/ρmin ratio was obtained at the sintering temperature equal to 1270 °C at a given content of Ba2LaBiO6.
Journal: Journal of Alloys and Compounds - Volume 452, Issue 2, 20 March 2008, Pages 397–400