Properties analysis of Mn-doped ZnO piezoelectric films

The Mn-doped ZnO piezoelectric films were prepared by sol–gel method. The ZnO films with perfect c-axis orientation were obtained in the annealing temperature range of 470–700 °C when 1% Mn ion (molar percent) was doped into precursor sol. The resistivity of the ZnO films annealed at 600 °C increased from 800 Ω cm (undoped) to 2 × 107 Ω cm (1% Mn-doped). The XPS spectra of Mn-doped ZnO films were analysed.