کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1625995 | 1516443 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The dielectric function of Mgy NiHx thin films (2â¤yâ¤10)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Mgy Ni (2â¤yâ¤10) thin films covered with a Pd cap layer are hydrogenated in 105 âPa H2 between room temperature and 80â° C and their dielectric function ÉË is determined from reflection and transmission measurements. The hydrogenated Mgy NiHx thin films show a continuous shift of the optical absorption towards higher photon energies with increasing y. Comparison of the obtained dielectric functions with predictions from an effective medium theory show that a considerable doping of the Mg2 NiH4 host takes place at least for yâ¤3.5 while no signature of MgH2 is observed in that composition range in the optical spectra. This is in contrast to the predictions from the bulk phase diagram where a mixture of semiconducting Mg2 NiH4 (energy gap Eg=1.6 âeV) and MgH2 (Eg=5.6 âeV) is expected.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 430, Issues 1â2, 14 March 2007, Pages 13-18
Journal: Journal of Alloys and Compounds - Volume 430, Issues 1â2, 14 March 2007, Pages 13-18
نویسندگان
W. Lohstroh, R.J. Westerwaal, J.L.M. van Mechelen, H. Schreuders, B. Dam, R. Griessen,