کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1626427 | 1516442 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
ZnO:Eu thin-films: Sol–gel derivation and strong photoluminescence from 5D0 → 7F0 transition of Eu3+ ions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
ZnO:Eu films on silicon wafers were prepared by a simple sol–gel route. It was found that in order to achieve pure ZnO crystal phase, the annealing temperature could not be higher than 850 °C. The pronounced peaks in the photoluminescence (PL) spectra of the ZnO:Eu films were originated from 5D0 → 7F0,1,2 transitions. It is somewhat unexpected that the PL emission from the 5D0 → 7F0 transition, which is principally believed to be forbidden, was remarkable. In order to explain this phenomenon, it is proposed that a majority of incorporated Eu3+ ions in the films occupy the interstitial sites of ZnO host.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 431, Issues 1–2, 4 April 2007, Pages 317–320
Journal: Journal of Alloys and Compounds - Volume 431, Issues 1–2, 4 April 2007, Pages 317–320
نویسندگان
Peiliang Chen, Xiangyang Ma, Deren Yang,