Controlled-growth and characterization of 3C-SiC and 6H-SiC films on C-plane sapphire substrates by LPCVD

SiC films have been deposited on C-plane (0 0 0 1) sapphire substrates by low pressure chemical vapor deposition (LPCVD). The 3C-SiC and 6H-SiC polytype kinds of the films grown at two different growth parameters (growth temperature and flow rate of silane) were verified by Raman spectra analysis. The results of XRD patterns and rocking curves show the films are of good crystalline quality. The microstructure of the films was measured by high resolution transmission electron microscopy (HRTEM). Field emission scanning electron microscope (FESEM) and atomic force microscope (AFM) were used to evaluate the surface morphology. The chemical bond and composition of the films were characterized by X-ray photoelectron spectra (XPS). All of these results further confirm that the SiC films are of good quality.