کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1627411 | 1516450 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ferromagnetic (Eu,Gd)Te/PbTe semiconductor heterostructures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
Ferromagnetic n-(Eu,Gd)Te/p-PbTe semiconductor heterostructures were grown by molecular beam epitaxy on BaF2 (1 1 1) monocrystalline substrates. The epitaxial growth of the layers was controlled in situ by reflection high-energy electron diffraction. X-ray diffraction and atomic force microscopy techniques revealed high structural and morphological quality of deposited layers. Gd content up to 5 at.% in (Eu,Gd)Te layers was estimated by energy dispersive X-ray fluorescence analysis. Hall effect measurements in (Eu,Gd)Te layers showed very high electron concentration of n â 1020 cmâ3 present due to Gd doping. Magnetic characterization of (Eu,Gd)Te/PbTe heterostructures was done using SQUID magnetometry and revealed ferromagnetic transition in n-(Eu,Gd)Te with the Curie temperature TC = 11-15 K. Both in-plane resistance of (Eu,Gd)Te layer and (normal to the plane) (Eu,Gd)Te-PbTe junction resistance measurements were carried out as a function of temperature and magnetic field showing changes in charge transport processes at temperatures close to the Curie temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 423, Issues 1â2, 26 October 2006, Pages 208-211
Journal: Journal of Alloys and Compounds - Volume 423, Issues 1â2, 26 October 2006, Pages 208-211
نویسندگان
P. Dziawa, S. Wrotek, W. Domuchowski, K. Dybko, L. Kowalczyk, E. Åusakowska, A. MÄ
kosa, A. Morawski, V. Osinniy, B. Taliashvili, Z. Tkaczyk, T. WosiÅski, J. Wróbel, T. Story,