کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1627508 | 1516456 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Determination of trapping center parameters of Tl2InGaS4-layered crystals by thermally stimulated current measurements
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have carried out thermally stimulated current measurements on as-grown Tl2InGaS4-layered single crystals in the low temperature range 10-60Â K with different heating rates. We found experimental evidence for the presence of two shallow hole trapping centers with activation energies of 4 and 10Â meV. We have determined the trap parameters using various methods of analysis, and these agree with each other. Their capture cross-sections have been found to be 6.5Â ÃÂ 10â26 and 4.0Â ÃÂ 10â25Â cm2, respectively, and their concentrations are 2.1Â ÃÂ 1012 and 6.5Â ÃÂ 1012Â cmâ3, respectively. It is concluded that in these centers retrapping is negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 417, Issues 1â2, 29 June 2006, Pages 23-28
Journal: Journal of Alloys and Compounds - Volume 417, Issues 1â2, 29 June 2006, Pages 23-28
نویسندگان
Nader A.P. Mogaddam, N.S. Yuksek, N.M. Gasanly, H. Ozkan,