کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1635158 | 1516795 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Relaxation of residual stresses in SiC wafers by annealing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Relaxation of residual stresses in SiC wafers by annealing Relaxation of residual stresses in SiC wafers by annealing](/preview/png/1635158.png)
چکیده انگلیسی
Residual stresses in SiC wafers, which were introduced during production processes including sawing, lapping, mechanical polishing (MP), and chemical-mechanical polishing (CMP), were evaluated in terms of changes in radius of curvature and high-resolution X-ray diffractometer (HRXRD) measurements. It was found that annealing was an effective method to reduce stress fields and to improve the wafer flatness. Lapping process generated more residual stresses than other machining processes, and these stresses could be relaxed by thermal treatment. The results showed that annealing was an essential procedure following lapping in the whole production process. The molten KOH etching results accounted for the correlation between the relaxation of stresses and the creation of basal screw dislocations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Rare Metals - Volume 25, Issue 6, December 2006, Pages 704-708
Journal: Rare Metals - Volume 25, Issue 6, December 2006, Pages 704-708
نویسندگان
CHEN Xiufang, XU Xiangang, HU Xiaobo, LI Juan, WANG Yingmin, JIANG Shouzhen, ZHANG Kai, JIANG Minhua,