Three-dimensional deposition of ZnO thin layer on nanopatterned silicon substrate

• Using AAO as etching mask, nanopatterned silicon substrate can be prepared by two-step ICP etching.
• ZnO film can be grown on nanopatterned silicon substrate by ALD method.
• 3D ZnO thin layer with 15 nm thickness but good crystallization can be obtained.

Three-dimensional deposition of 15 nm thick ZnO thin layer can be achieved successfully on nanopatterned silicon substrate. The nanopatterned silicon (NPSi) substrate was prepared by two-step ICP etching using anodic aluminum oxide (AAO) film as etching mask. The average diameter and depth for the silicon nanopore arrays are approximately 60 nm and 300 nm, respectively. Also, the NPSi substrate was entirely covered by ZnO thin layer grown by atomic layer deposition. It is believed that the above-mentioned process may provide a good alternative for the preparation of three-dimensional ZnO film and device.