Deep boron diffusion induced surface damage in silicon

• Deep boron diffusion in silicon (100), (110) and (111) wafers.
• X-ray diffraction study of diffused silicon samples.
• Study of diffusion induced crystal damage in silicon by reciprocal space mapping.
• Study of surface damage due to the boron diffusion by atomic force microscopy.

This paper presents deep boron diffusion induced damages in silicon (100), (110) and (111) surfaces. The silicon (100) and (110) samples showed a broad hump at the higher angle (ω) side during x-ray Rocking curve measurement; whereas, the (111) sample shows an additional broad peak at higher angle side. All the diffused samples showed two distinct contours in reciprocal space mapping measurements. Due to the diffusion process, surface roughness of the silicon samples is found to be increased from 10 nm to 110 nm, 70 nm and 30 nm for the silicon (100), (110) and (111) samples respectively.