Solution-processed transparent conducting Ag nanowires layer for photoelectric device applications

• Excellent transparent conducting layer was achieved by a solution process.
• Spin-coating of AgNWs on a Si substrate spontaneously forms Schottky Junction.
• AgNWs/Si device provided high photoresponses for broad wavelengths.
• Energy band diagram was traced by Mott–Schottky analyses.
• This simple and strong design tool is useful for various photoelectric devices.

Electrically conductive and optically transparent Ag nanowires (AgNWs) were spin-coated on a Si substrate for high-performing Schottky junction device. The AgNWs window layer significantly improved transmittance for broad wavelengths, comparing to that of the conventional indium-tin-oxide (ITO) film structure. This optical benefit spontaneously provides significantly improved photodetection for broad wavelengths. The junction properties were investigated using current–voltage and voltage–capacitance characteristics. The AgNWs/Si formed a built-in potential of 0.62 eV at the interface and this photodetector provided a considerably high rectification ratio with a low saturation current value. These intrinsic advantages simultaneously induced substantially enhanced signal to noise ratio different from the ITO/Si heterojunction device. This solution-processed architecture of a transparent conductor (TC) is also beneficial for non-vacuum designs. We demonstrated that AgNWs would be the competitive alternative for the conventional TC coating techniques. Electrical analyses and photoresponses were systematically investigated for AgNWs/Si Schottky device.

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