Influence of channel layer thickness on the stability of amorphous indium zinc oxide thin film transistors

• a-IZO-TFTs with different channel layer thickness were fabricated.
• The initial characteristics and aging effect on the thickness were investigated.
• The PBS and NBS stabilities of initial and aged a-IZO-TFTs were compared.
• Thin channel layer a-IZO-TFTs exhibit good anti-aging effect and bias stability.

Amorphous indium zinc oxide (a-IZO) thin film transistors (TFTs) with different channel layer thickness were fabricated on silicon wafers by radio frequency magnetron sputtering method at room temperature. The influence of channel layer thickness on initial electrical characteristics and aging effect of a-IZO-TFTs were investigated. At the same time, the positive / negative bias stress stability of initial and 60-days-aged a-IZO-TFTs were compared. All results indicate that thin channel layer a-IZO-TFTs exhibit good anti-aging effect and bias stability.