کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1643174 | 1517247 | 2015 | 4 صفحه PDF | دانلود رایگان |
• Growth of stress-free 3C-SiC layer by carburization.
• Carburization of silicon nanopillars.
• Discussion of Si outdiffusion through the SiC layer.
An original process to grow cm-squared stress-free 3C-SiC layer is described here. Based on the carburization of silicon nanopillars at relatively low temperature (1150 °C) with methane, the process uses the outdiffusion mechanism of silicon atoms through silicon carbide. After the growth at high pressure of a very thin silicon carbide layer (3 nm), the pressure is decreased to enhance the outdiffusion of silicon through the SiC layer, and thus grow a stress free, 450 nm-thick SiC layer on top of silicon nanopillars. The crystalline quality of the as-grown 3C-SiC layer is good (FWHM of 3C-SiC TO-mode=10 cm−1), despite the presence of stacking faults. This original process could be used to grow by epitaxy a free-standing 3C-SiC layer of high crystalline quality.
Journal: Materials Letters - Volume 141, 15 February 2015, Pages 263–266