کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1643513 1517249 2015 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
In situ study on dissolution and growth mechanism of interfacial Cu6Sn5 in wetting reaction
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
In situ study on dissolution and growth mechanism of interfacial Cu6Sn5 in wetting reaction
چکیده انگلیسی
Synchrotron radiation real-time imaging technology was used for in situ study of dissolution and growth behavior of interfacial Cu6Sn5 intermetallic compound (IMC) in Sn/Cu solder interconnect during reflow soldering. The pre-formed Cu6Sn5 grains dissolved into the liquid solder with decreasing aspect ratio in the heating stage, maintained a thin layer of scallop-type in the dwelling stage, and re-precipitated on the existing Cu6Sn5 grains at a faster growth rate with increasing aspect ratio in the cooling stage. The Cu concentration gradient at the interface is responsible for the aspect ratio variation (corresponding to dissolution and re-precipitation of interfacial Cu6Sn5 grains), which is also supported by the simulation of atomic diffusion in the solder based on Fick׳s second law. The growth behavior was well explained by a proposed model based on the Cu concentration gradient.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 139, 15 January 2015, Pages 42-45
نویسندگان
, , , ,