کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1643513 | 1517249 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
In situ study on dissolution and growth mechanism of interfacial Cu6Sn5 in wetting reaction
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: In situ study on dissolution and growth mechanism of interfacial Cu6Sn5 in wetting reaction In situ study on dissolution and growth mechanism of interfacial Cu6Sn5 in wetting reaction](/preview/png/1643513.png)
چکیده انگلیسی
Synchrotron radiation real-time imaging technology was used for in situ study of dissolution and growth behavior of interfacial Cu6Sn5 intermetallic compound (IMC) in Sn/Cu solder interconnect during reflow soldering. The pre-formed Cu6Sn5 grains dissolved into the liquid solder with decreasing aspect ratio in the heating stage, maintained a thin layer of scallop-type in the dwelling stage, and re-precipitated on the existing Cu6Sn5 grains at a faster growth rate with increasing aspect ratio in the cooling stage. The Cu concentration gradient at the interface is responsible for the aspect ratio variation (corresponding to dissolution and re-precipitation of interfacial Cu6Sn5 grains), which is also supported by the simulation of atomic diffusion in the solder based on Fick׳s second law. The growth behavior was well explained by a proposed model based on the Cu concentration gradient.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 139, 15 January 2015, Pages 42-45
Journal: Materials Letters - Volume 139, 15 January 2015, Pages 42-45
نویسندگان
M.L. Huang, F. Yang, N. Zhao, Z.J. Zhang,