V2O3 ultrathin nanosheets: Controlled synthesis and electrical properties

• Ultrathin V2O3 nanosheets by the top-down precursor-pyrolyzation strategy had been synthesized.
• The first-order transformation of V2O3 disappeared with the increasing of temperature.
• It represents a positive temperature coefficient semiconductor behavior.
• The discharge capacity of V2O3 nanosheets is maintained at 300mAh/g after 75 cycles at 200 mA/g.

Graphene-like structure of V2O3 had been synthesized by a top-down precursor-pyrolyzation strategy. The first-order transformation of V2O3 disappeared with the increasing of temperature. It represents a positive temperature coefficient semiconductor behavior. It is a noteworthy and promising candidate for ultrathin energy-storage devices. The discharge capacity of V2O3 nanosheets is maintained at 300 mAh/g after 75 cycles at the current density of 200 mA/g, which exhibits excellent discharge capacity and superior cycling stability. Flower-like precursors composed of nanosheets were also successfully synthesized by adjusting temperature and time. V2O3 has perfectly inherited the morphology of its precursors. The new method demonstrated here provides a new way in the preparation of other ultrathin nanosheets materials.

Figure optionsDownload as PowerPoint slide