Polycrystalline Sr2FeMoO6 thin films on Si substrate by pulsed laser deposition for magnetoresistive applications

• Polycrystalline Sr2FeMoO6 thin films were deposited at temperatures 500-800 °C on STO buffered Si (100) substrates by pulsed laser deposition.
• Structural analysis shows the growth of single phase polycrystalline Sr2FeMoO6 films at low deposition temperature 700 °C.
• A large ~12% MR was observed in polycrystalline SFMO films compared to ~3.80% MR films grown on STO polycrystalline substrate.
• First time, MR studied in polycrystalline SFMO films grown on Si substrate, which make them promising for magnetoresistive and spintronic applications.

Polycrystalline Sr2FeMoO6 (SFMO) thin films were deposited at different substrate temperatures (500–800 °C) on STO buffered Si (100) substrates by pulsed laser deposition (PLD). Structural analysis shows the single phase formation of polycrystalline SFMO thin films. A large (~12%) high field magnetoresistance (HFMR) was observed at 5 K in polycrystalline films deposited at 800°C.. First time, we studied the MR effect in polycrystalline SFMO thin films grown on Si substrate, which make them very promising for magnetoresistive and spintronic applications and possibly open the future prospect for their possible integration in microelectronic industries.