Transparent N-doped graphene films on substrates fabricated by hydroxylamine diffusion induced assembly

• Hydroxylamine diffusion induced assembly has been used to prepare thin graphene film.
• Transparent N-doped graphene film is formed due to N atom doping in the process.
• The films with large area exhibit good conductivity as well as the transmittance.

Transparent N-doped graphene films (NG-TF) on substrates have been fabricated by using approach of “hydroxylamine diffusion induced assembly”. The films have been characterized by X-ray photoelectron spectroscopy, scanning electron microscopy, UV–visible and Raman spectroscopy. The results indicate that the N atom has doped into graphene sheets and the transmittance of the films at 550 nm has linear relationship versus the films' thickness, and that the surface resistance of the films decreases with the increase of graphene thickness deposited on the substrates. The optimum NG-TF exhibits a surface resistance of about 4000 Ω/square and transmittance of about 78% at 550 nm.