One-step synthesis of SnO2-core/Ga2O3-shell nanowires by thermal evaporation

SnO2-core/Ga2O3-shell nanowires were synthesized by one-step thermal evaporation of a mixture of SnO2, GaN and graphite powders at 1000 °C. Transmission electron microscopy and energy-dispersive X-ray spectroscopy concentration profiles of Sn, Ga, and O across the diameter of the nanowire indicated clearly that the nanowire consisted of a single crystal SnO2 core and a single crystal Ga2O3 shell with a shell layer thickness of ∼20 nm. A possible growth mechanism of SnO2-core/Ga2O3-shell nanowires in the one-step synthesis process is proposed.

► Core–shell nanowires were synthesized by one-step thermal evaporation process.
► The nanowire consisted of a single crystal SnO2 core and a single crystal Ga2O3 shell.
► A possible growth mechanism of the core–shell nanowires in the one-step synthesis process is proposed.