Fabrication of luminescent nanostructures by electron-beam direct writing of PMMA resist

We report on the conversion of non-luminescent conventional poly(methylmethacrylate) (PMMA)-based electron-beam resists into luminescent materials when used as negative-tone resists, that is, when exposed to high electron irradiation doses. Raman spectroscopy reveals the chemical transformation induced by electron irradiation which is responsible for the observed luminescence in the visible (blue) region. The emission intensity from exposed PMMA-based patterns can be controlled by the electron irradiation dose employed to create them.

► PMMA resist becomes luminescent when used as a negative resist.
► Emission wavelength peak (485 nm) does not change with the electron dose.
► Raman spectroscopy reveals the origin of the e-beam induced PL.
► PMMA luminescent nanostructures by direct electron-beam lithography.