One-dimensional single crystalline antimony sulfur iodide, SbSI

We have successfully prepared gram-scale 1-D SbSI microstructures, and characterized in detail using thermogravimetric (TG) analysis, optical microscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) crystallography, UV–vis absorption, and current–voltage measurement. The growth direction of SbSI is found to be [001]. The interplanar distances for [001] and [220] are measured to be 0.40 and 0.33 nm, respectively. The indirect band gap for 1-D SbSI is determined to be 1.84 (±0.1) eV. On the basis of TG data, SbSI decomposes to Sb2S3 residue at around 324 °C, and it further decomposes to Sb residue upon heating above 710 °C. The current at an applied voltage of 10.0 V was measured to be 4×10−2 nA for a single SbSI rod. In addition, we have synthesized 1-D Sb2S3 (antimony sulfide) with a band gap of 1.55 eV, and included some of its characteristics for comparative discussion.

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► One-dimensional single crystalline SbSI is synthesized by a hydrothermal method.
► Growth direction of SbSI is found to be [001].
► Band gap of SbSI is determined to be 1.84 eV.
► SbSI decomposes to Sb2S3 at above 324 °C.
► Flow current of a single SbSI rod is measured to be 4×10−2 nA at 10 V.