Preparation and characterization of transparent Bi3.6Ho0.4Ti3O12/ZnO:Al ferroelectric-semiconductor heterostructure by pulsed laser deposition

Ho-doped Bi4Ti3O12 ferroelectric thin films with the composition of Bi3.6Ho0.4Ti3O12 (BHT) were integrated with the epitaxial (0001)-oriented Al-doped ZnO (AZO) semiconductor thin films grown on c-sapphire substrates by pulsed laser deposition using a pure phase BHT ceramic target. The structure characterizations indicated that the BHT film grown on AZO (0001) was a single phase structure of Bi-layered Aurivillius phase bismuth titanate and showed (100)-preferred orientation. The BHT/AZO heterostructure was with a smooth interface and a uniform microstructure. All samples with various thickness were transparent and the average transmittance of (500 nm)BHT/(300 nm)AZO was higher than 89% in the range of 400–800 nm.

► Bi4Ti3O12/ZnO ferroelectric-semiconductor heterostructure was firstly studied.
► BHT/AZO thin film heterostructure was firstly prepared by pulsed laser deposition.
► (100)-preferred BHT thin film was integrated with (0001)-oriented AZO layer by PLD.
► (100)-preferred BHT thin film grown on AZO(0001) was studied by Raman spectrum.
► The UV–vis transmittance spectra of BHT/AZO thin film heterostructures were studied.