Effects of annealing temperature on microstructure and electrical properties of Mn–Co–Ni–O thin films

Mn1.85Co0.3Ni0.85O4 (MCN) thin films were prepared on Al2O3 substrates by chemical solution deposition method at different annealing temperature (650, 700, 750 and 800 °C). Effects of annealing temperature on microstructure and electrical properties of MCN thin films were investigated. The MCN thin film annealed at 750 °C is of good crystallization and compact surface. It shows lower resistance (4.8 MΩ) and higher sensitivity (3720.6 K) than those of other prepared films. It also has small aging coefficient (3.7%) after aging at 150 °C for 360 h. The advantages of good properties make MCN thin film very promising for integrated devices.