کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1649392 1007581 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of substrate bias voltage on properties of Pt thin films deposited by non-mass separated ion beam deposition method
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Influence of substrate bias voltage on properties of Pt thin films deposited by non-mass separated ion beam deposition method
چکیده انگلیسی

Pt thin films were deposited on Si substrates by applying a negative substrate bias voltage using a non-mass separated ion beam deposition method. The effect of the substrate bias voltage on the properties of the deposited films was investigated. In the case of Pt thin films deposited without the substrate bias voltage, a columnar structure and small grains were observed. The electrical resistivity of the deposited Pt films was very high (49.3 ± 0.65 µΩ cm). By increasing the substrate bias voltage, no clear columnar structure was observed. At the substrate bias voltage of − 75 V, the resistivity of the Pt film showed a minimum value of 16.9 ± 0.2 µΩ cm closed to the value of bulk (10.6 µΩ cm).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 63, Issue 26, 31 October 2009, Pages 2181–2184
نویسندگان
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