کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1650052 1007596 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication of calcium ion sensitive diamond field effect transistors (FETs) based on immobilized calmodulin
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Fabrication of calcium ion sensitive diamond field effect transistors (FETs) based on immobilized calmodulin
چکیده انگلیسی

We have developed calcium (Ca2+) ion sensitive solution-gate field effect transistors (SGFETs) on polycrystalline diamond by using partial amination and immobilization of calmodulin (CaM), a specific protein to calcium ions. The CaM is covalently immobilized on functionalized diamond surface, and the functionalized surface was analyzed by X-ray photoelectron spectroscopy, respectively. Also, the high performance of the CaM-immobilized diamond SGFET for detecting Ca2+ were studied with respect to high selectivity and sensitivity in various concentrations and pH.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 64, Issue 21, 15 November 2010, Pages 2321–2324
نویسندگان
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