کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1650109 1007598 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
AFM studies of microindented GaN and InGaN
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
AFM studies of microindented GaN and InGaN
چکیده انگلیسی

The microhardness characteristics of GaN and GaN/InGaN films epitaxially grown on (0001) sapphire have been investigated using Vickers and Knoop indenters. The variation of HV and HK follows a reverse type of indentation size effect (reverse ISE). The microhardness results have also been analyzed using Meyer's law, Hays–Kendall approach and Proportional specimen resistance (PSR) model. The effect of N+ implantation on the microhardness of GaN has also been studied. The implanted sample is more resistant to plastic penetration than the unimplanted one and it is found that implantation enhances the surface hardness. Detailed AFM studies around the indented regions of the GaN and GaN/InGaN give the nature and behavior of the deformation on the surface.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 63, Issue 5, 28 February 2009, Pages 515–518
نویسندگان
, , ,