Preparation, structure and photoluminescence properties of SiO2/ZnO nanocables via electrospinning and vapor transport deposition

SiO2/ZnO nanocables were prepared by the combination of electrospinning technology and vapor transport deposition procedure. X-ray diffraction patterns indicated that ZnO with wurtzite structure was deposited on SiO2 nanofibers templates successfully. Field emission scanning electron microscopy and transmission electron microscopy showed that the products were core/shell nanocables with a narrow distribution of the core/shell diameters. The nanocables showed a strong near band edge emission in ultraviolet region and a weak deep level emission at room temperature in their photoluminescence (PL) spectra. The anomalous temperature characteristic of integrated PL intensity in temperature-dependent PL spectra was discussed by considering carrier injection across the interface of SiO2/ZnO nanocables.