Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy

Homoepitaxial ZnO films have been grown via liquid-phase epitaxy (LPE) on (0001) oriented ZnO substrates. X-ray rocking curve revealed the high quality of the ZnO films with a FWHM of 40 arc sec. Films of thickness about 20 μm were grown in the temperature range 700–720 °C. The growth rate of ZnO films was estimated to be 0.3 μm h− 1. Atomic force microscope analysis showed that the surface roughness of ZnO films was very low, which further confirmed the high crystallinity of ZnO films.