Effect of ammoniating temperature on morphologic and optical properties of GaN nanostructured materials

GaN nanostructured materials have been obtained on Si(111) substrates by ammoniating the Ga2O3/ZnO films at different temperature in a quartz tube. X-ray diffraction (XRD), Scanning electron microscope (SEM), and photoluminescence (PL) are used to analyze the structure, morphology and optical properties of GaN nanostructured films. The results show that their properties are investigated particularly as a function of ammoniating temperature. The optimally ammoniating temperature of Ga2O3 layer is 950 °C for the growth of GaN nanorods. These nanorods are pure hexagonal GaN wurtzite structure with lengths of about several micrometers and diameters of about 200 nm, which is conducive to the application of nanodevices. Finally, the growth mechanism is also briefly discussed.