Pechinin synthesis and luminescence properties of Y3Ga5O12(YGG):Tb thin film

YGG:Tb thin films were successfully prepared by Pechni sol–gel process. The structure, surface morphology, evolution of film crystallization and their luminescent properties were investigated. We find the annealing process is very important to the YGG:Tb film crystallization. Uniform crack-free films can be obtained by conventional annealing for 1 h after rapid thermal treating for 10 min at 800 °C. The excitation and emission spectra of photoluminescence (PL) were used to characterize the luminescent properties. The excitation spectrum of YGG:Tb is dominated by the 4f–4f5d transition of Tb3+at 260 nm. The emission peaks of phosphor thin film lie at 488 and 543 nm. It can be used as a promising phosphor material for FED or ELD application.