Inner potential fluctuation in SiC nanowires with modulated interior structure

SiC nanowires with modulation in diameter and interior structure along the growth direction have been fabricated via a self-organized process. The SiC nanowires, the basic structure of which is zincblende-type, contain many bunching stacking faults along the growth direction inhomogeneously. In other words, the SiC nanowires consist of alternate stacks of the perfect crystal and the defective regions. We have found the difference in the values of mean inner potential between the perfect crystal and the defective regions by means of electron holography.