کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1652814 1007648 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Synthesis of GaN nanowires through Ga2O3 films' reaction with ammonia
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Synthesis of GaN nanowires through Ga2O3 films' reaction with ammonia
چکیده انگلیسی

GaN nanowires were synthesized by ammoniating Ga2O3 films on Ti layers deposited on Si (111) substrates at 950 °C. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR) and high-resolution transmission electron microscopy (HRTEM). The XRD, FTIR and HRTEM studies showed that these nanowires were hexagonal GaN single crystals. SEM observation demonstrated that these GaN nanorods with diameters ranging from 50 nm to 100 nm and lengths up to several micrometers intervene with each other on the substrate.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 61, Issue 13, May 2007, Pages 2833–2836
نویسندگان
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