کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1653012 1007653 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ni induced lateral crystallization of high density Ge-dots/Si heterostructures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Ni induced lateral crystallization of high density Ge-dots/Si heterostructures
چکیده انگلیسی
In this work, we propose a novel method for obtaining high-density Ge-dots/Si multilayered heterostructures. The high-density self-assembled Ge dots are firstly grown on a-Si layer using low-pressure chemical vapor deposition (LPCVD), and then low-temperature recrystallized by Ni based metal induced lateral crystallization (MILC). According to optical micrograph, microprobe Raman spectroscopy and transmission electron microscopy (TEM) observations, it has been found that the Ni induced lateral crystallized Si film has large leaf-like grains elongated along the MILC direction with (110) preference. The strain shift of Ge dots reveals the formation of high quality interface between the crystallized Si and Ge dot.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 61, Issue 17, July 2007, Pages 3711-3714
نویسندگان
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